原位Si掺杂c-BN薄膜的制备及电学性质研究  

Study on Preparation and Electrical Properties of in Situ Si-Doped c-BN Films

作　　者：应杰[1] 范亚明[1] 谭海仁[1] 施辉伟[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《微纳电子技术》2010年第7期409-414,共6页Micronanoelectronic Technology

摘　　要：采用双离子束辅助沉积技术制备了原位Si掺杂的c-BN薄膜。系统研究了辅源轰击束流大小、辅源气体组分比以及衬底温度对制备薄膜的影响。结果表明,在掺入Si杂质后,要保持高立方相含量,必须增强辅源离子的轰击强度;随着辅源混合气体中Ar含量的增加,立方相含量也逐步增加;中等衬底生长温度既可以保持薄膜中高立方相含量以及较好的晶体质量,又不会导致薄膜中应力过大。电学测试则显现掺杂薄膜具有明显的半导体特性和非晶态半导体的电学输运性质。The in situ Si-doped cubic boron nitride（c-BN）thin films were fabricated by ion beam assisted deposition.The influences of the ion flux,gas composition ratio and substrate temperature on the preparation of films were investigated systematically.The results show that the strength of energy ion bombardment has to be enhanced in order to keep the high c-BN content after the incorporation of Si.The c-BN content increases with the Ar content in gas constitute increasing.The moderate substrate temperature is essential to hold high c-BN content and good crystal quality,meanwhile it won＇t lead to excessive compressive stress of thin films.Electrical measurements indicate that Si-doped c-BN films have obvious semiconductor properties and electrical transport properties of amorphous semiconductors.

关 键 词：立方氮化硼薄膜 掺杂 硅 立方相含量 电学输运 

分 类 号：TN304.2[电子电信—物理电子学] O472[理学—半导体物理]