溅射工艺参数对PZT铁电薄膜相变过程的影响  

Effect of Sputtering Parameters on Phase Transformation of PZT Thin Films

作　　者：曾晟[1] 丁爱丽[1] 仇萍荪[1] 何夕云[1] 罗维根[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050

出　　处：《无机材料学报》1999年第1期107-113,共7页Journal of Inorganic Materials

摘　　要：采用射频磁控溅射工艺，在（111）Pt／Ti／SiO_2／Si衬底上用PZT（53／47）陶瓷靶制备铁电薄膜．用快速光热退火炉对原位沉积的薄膜进行RTA处理．薄膜的相结构由XRD确定．通过改变氩气和氧气的比例以及衬底温度，研究了溅射气氛和衬底温度对PZT铁电薄膜结构的影响．实验表明，在不同的溅射气氛和衬底温度条件下，薄膜会经历不同的相变过程．用RT66A标准铁电测试设备测量了薄膜的铁电性能，在外加电压为5V时，Pr=14．6μC／cm2，Ec＝82．gkV／cm．PZT thin films were fabricated on (111)Pt/Ti/SiO2/Si by RF magnetron sputtering witha ceramic target(PZT53/47). The as-deposited thin films were annealed with a rapid thermalannealing process. XRD was used to determine the structure of the thin films. This paper focusedon the research about the influence of sputtering gas and substrate temperature on the structureof the thin films. It was found that the process of phase transformation of PZT thin films changedwith the ratio of Ar to O2 and substrate temperatures. The ferroelectric property of PZT thin filmswas measured by RT66A standardized ferroelectric test system. When 5V voltage was applied, thefilm showed a remnant polarization of 14.6C/cm2, and coercive field of 82.9kV/cm.

关 键 词：射频磁控溅射 铁电薄膜 钙钛矿相 PZT 相变 

分 类 号：TM221.051[一般工业技术—材料科学与工程] O484.4[电气工程—电工理论与新技术]