GaN基异质外延膜中Al组分含量测试方法综述  

STUDY ON TECHNOLOGY OF EPITAXIAL AlGaN COMPOSITION DETERMINATION

作　　者：王雪蓉[1] 郑会保[1] 魏莉萍[1] 刘运传[1] 孟祥艳[1] 

机构地区：[1]中国兵器工业集团第五三研究所,济南250031

出　　处：《化学分析计量》2010年第4期93-96,共4页Chemical Analysis And Meterage

摘　　要：介绍了目前可用于AlGaN半导体异质外延膜中Al组分含量测定的多种测试技术,包括高分辨X射线衍射技术、光致发光法、紫外-可见光透射光谱法、电子探针法、卢瑟福背散射法等,并对各种测试技术的原理和优缺点进行了概述。The techniques for determination of Al composition in AlGaN epitaxial films were introuduced, which included high -resolution X - ray diffraction, photoluminescence, UV - visible transmittance spectroscopy, electron microprobe analysis and Rutherford backscattering. The principles of these texting techniques and the advantages and disadvantages were also summarized.

关 键 词：AlGaN外延膜 高分辨X射线衍射 光致发光 电子探针 卢瑟福背散射 

分 类 号：TS411[农业科学—烟草工业]