射频磁控溅射法制备ZnS多晶薄膜及其性质  

Study of ZnS thin films prepared by RF magnetron sputtering technique

作　　者：谢婧[1] 黎兵[1] 李愿杰[1] 颜璞[1] 冯良桓[1] 蔡亚平[1] 郑家贵[1] 张静全[1] 李卫[1] 武莉莉[1] 雷智[1] 曾广根[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《物理学报》2010年第8期5749-5754,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60506004);国家高技术研究发展计划(批准号:2003AA513010)资助的课题~~

摘　　要：实验采用射频磁控溅射法在玻璃衬底上沉积了ZnS多晶薄膜,研究了沉积气压、退火温度和衬底温度对ZnS薄膜质量的影响.利用X射线衍射(XRD)分析了薄膜的微结构,并计算了内应力值.通过紫外-可见光分光光度计测量了薄膜的透过谱,计算了Urbach能量和禁带宽度.利用扫描电子显微镜(SEM)观察了薄膜的表面形貌.结果表明:衬底温度为室温时沉积的ZnS薄膜具有较大的压应力,并且内应力值随着工作气压增大而增大,在300℃下进行退火处理后内应力松弛,衬底温度为350℃时制备的ZnS薄膜内应力小,透过率高,经300℃退火处理后结晶质量有所提高.ZnS thin films were prepared on glass substrate by RF magnetron sputtering technique. The quality of ZnS films formed at different deposition pressures,annealing temperatures and substrate temperatures were studied. The change of the film microstructure was analyzed by XRD and the lattice stress was evaluated. The spectral transmittance was measured by a spectrometer. From the spectrum,the band gap and Urbach energy were calculated. Scanning electron microscopy （SEM） was used to study the morphology of the surface of the sample. The result showed that there is big stress in the lattice when the substrate is at room temperature,and the value of stress increases with the pressure. After annealing at 300 ℃ ,the stress is minimal. When the substrate temperature is 350 ℃ ,the stress decreases,at the same time,ZnS films have good transmittance,and annealing at 300 ℃ improves the film quality.

关 键 词：ZNS薄膜 射频磁控溅射 内应力 

分 类 号：O484.4[理学—固体物理]