用离子束增强沉积法制备In-N共掺杂ZnO薄膜  

Zinc Oxide Films Co-Doped with Indium and Nitrogen Prepared by IBED Method

作　　者：金铱[1] 谢建生[1] 李金华[1] 袁宁一[1] 

机构地区：[1]常州大学,江苏常州213016

出　　处：《廊坊师范学院学报（自然科学版）》2010年第4期50-52,共3页Journal of Langfang Normal University(Natural Science Edition)

摘　　要：用In2O3粉体与ZnO粉体均匀混合,压制成溅射靶。在Si和Si O2/Si衬底上,用离子束增强沉积(IBED)方法对沉积膜作Ar+/N+注入,制备In-N共掺杂氧化锌薄膜。在氮气氛中作适当的退火,可以方便地获得取向单一、结构致密、性能良好的共掺杂ZnO薄膜。初步研究了I NZO共掺杂薄膜的电阻率随退火条件的变化。Polycrystalline zinc oxide thin films co-doped with In-N（INZO） were prepared on Si and SiO2/Si substrates by modified Ion Beam Enhanced Deposition（IBED） method.In2O3 and ZnO powders were mixed and pressed as the sputtering target.Mixing beam of argon and nitrogen ions implanted into the deposited films during sputtering.The experiment results indicated that the INZO films with satisfactory properties and dense structure could be obtained easily by selecting suitable annealing condition in nitrogen atmosphere.The results also revealed that the ZnO films showed a hexagonal wurtzite structure,and the extent of c-axis orientation.This study searched the probabilities of preparing the co-doping ZnO films with high quality on Si and SiO2/Si substrates by modified Ion Beam Enhanced Deposition（IBED） method,and researched rouphly the structure and electrical properties of the INZO films.

关 键 词：氧化锌薄膜 退火 离子束增强沉积 

分 类 号：O552.6[理学—热学与物质分子运动论]