Cu_3N薄膜制备及其性能研究  

Preparation and Properties of Cu_3N Thin Films

作　　者：张昌印[1] 陈小松[1] 尹玉丽[1] 吴绍彬[1] 杨磊[1] 黄致新[1] 

机构地区：[1]华中师范大学物理科学与技术学院,武汉430079

出　　处：《信息记录材料》2010年第4期60-64,共5页Information Recording Materials

基　　金：国家大学生创新性实验项目基金资助

摘　　要：Cu3N薄膜的晶面取向、沉积速率、电学特性等性质除与制备方法有关外,还和制备工艺参数有很大关系。溅射法制备Cu3N薄膜工艺参数主要有,混合气体(N2+Ar)中氮气分压比r、基底温度T(℃)、溅射功率P(W)。为了研究Cu3N薄膜的性能与其制备工艺参数之间关系,本文采用反应射频磁控溅射法,在玻璃基底上成功制备了Cu3N薄膜,并研究了工艺参数对其晶面取向、膜厚、电学性能、沉积速率的影响。Cu3N films crystal orientation, deposition rate, electrical characteristics is greatly related with preparation parameters as well as preparation method. The parameters of preparing Cu3 N thin films include nitrogen partial pressure ratio in gas mixture, substrate temperature, and sputtering power. In order to study the relation between the nature of Cu3N thin films and its preparation parameters, Cu3 N thin films in glass substrate by reactive radio frequency magnetron sputtering in different preparation parameters were successfully prepared, and the influence about crystal orientation, film thickness, electrical properties and deposition rate were in vestigated.

关 键 词：Cu3N薄膜 工艺参数 性能 

分 类 号：TQ587[化学工程—精细化工]