适于PMOSFET的局部双轴压应变Si_(0.8)Ge_(0.2)的生长  

Growth of Local Biaxial Strained Si_(0.8)Ge_(0.2) for PMOSFET

作　　者：卢盛辉[1] 杨洪东[1] 李竞春[1] 谭开州[2] 张静[2] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [2]中国电子科技集团第二十四研究所模拟集成电路国家重点实验室,重庆400060

出　　处：《材料导报》2010年第16期1-4,共4页Materials Reports

基　　金：模拟集成电路国家重点实验室基金资助项目(51439010204DZ0219)

摘　　要：通过控制局部双轴压应变SiGe材料的缺陷、组分与厚度,设置了多晶Si侧壁与Si缓冲层的特别几何结构,采用固态源分子束外延MBE设备生长了适于PMOSFET器件的局部双轴压应变Si0.8Ge0.2材料。经SEM、AFM、XRD测试分析,该材料表面粗糙度达0.45nm;Si1-xGex薄膜中Ge组分x=0.188,厚度为37.8nm,与设计值较接近;穿透位错主要由侧壁界面产生,集中在窗口边缘,密度为(0.3～1.2)×103cm-2;在表面未发现十字交叉网格,且Si0.8Ge0.2衍射峰两侧干涉条纹清晰,说明Si0.8Ge0.2与Si缓冲层界面失配位错已被有效抑制。测试分析结果表明,生长的局部双轴压应变SiGe材料质量较高,可用于高性能SiGe PMOSFET的制备与工艺参考。With controlling the defects, Ge fraction and thickness of local biaxial strained SiGe and adopting special poly-Si sidewall and LT-Si buffer geometry structure, the local biaxial compress strained Si0.8 Ge0.2 materials which can be used for PMOSFETs are grown by solid source MBE. The analysis results of materials using SEM, AFM and XRD shows that the surface root mean square roughness is 0. 45nm; the thickness of Si1-xGer film is 37.8 nm and Ge fraction is 0. 188 which is close to the designed value; the threading dislocations caused mainly by the interface of sidewall lie in the window sides with density of （0.3-1.2） × 10^3cm^-2 ; No cross-hatch pattern on the surface and the clear interference fringes at the both sides of Si0.8Ge0.2 diffraction peak illustrate that misfit dislocations at the interface of Si0.8Ge0.2/Si buffer are suppressed effectively. The experimental research demonstrates the high quality of local biaxial compress strained SiGe material fabricated, which indicates that the present method and manner can be used as a reference for process and fabrication of high performance SiGe PMOSFETs.

关 键 词：局部双轴应变 应变锗硅 特别几何结构 材料生长 

分 类 号：TN304.1[电子电信—物理电子学]