半导体桥多晶硅工艺优化  

Optimization of Polysilicon Process for Poly Si Semiconductor Bridge

作　　者：胡剑书[1] 

机构地区：[1]中国人民解放军驻重庆气体压缩机厂军事代表室,重庆400060

出　　处：《微电子学》2010年第4期601-603,共3页Microelectronics

摘　　要：针对多晶硅淀积工艺对半导体桥性能影响严重的问题,开展多晶硅工艺优化实验,获得多晶硅淀积工艺优化条件,多晶硅半导体桥电阻稳定控制在1±0.07 Ω范围内,达到多晶硅桥的应用要求。Polysilicon deposition process has great effect on the performance of polysilicon semiconductor bridge.Process conditions of polysilicon deposition were optimized through experiments.With these optimized conditions,resistance of the polysilicon semiconductor bridge was controlled to 1±0.07 Ω,which satisfies the requirements of polysilicon semiconductor bridge.

关 键 词：半导体工艺 多晶硅电阻 半导体桥 

分 类 号：TN389[电子电信—物理电子学]