微波等离子体法沉积镍膜的研究  

Study on Ni Thin-Film Deposition by MWPVD

作　　者：于庆先[1] 孙四通[1] 张敬祎 高秀敏 黄富育 李烈英 

机构地区：[1]青岛科技大学材料科学与工程学院,山东青岛266042 [2]青岛环友等离子技术研究所,山东青岛266042

出　　处：《微电子学》2010年第4期604-606,620,共4页Microelectronics

基　　金：青岛市信息产业局资助项目(A-2009-06)

摘　　要：采用微波等离子镀膜机制备镍薄膜。该方法的特点是用纯金属镍为靶,用微波产生等离子体,用交流电源作为轰击电源,远程输运。使用XRD、SEM、EDS对采用微波等离子法沉积的薄膜进行表征,对实验结果进行分析,并对镀膜工艺进行了初步探索。Polycrystalline nickel film was grown by microwave plasma vapor deposition（MWPVD）.In this technique,pure nickel was used as target and microwave was used to generate plasma,with AC power as bombardment power.The film was characterized by XRD,SEM and EDS.Experimental results were analyzed and summarized,and deposition process was investigated.

关 键 词：微波等离子体 镍膜 离子轰击 

分 类 号：TN386.1[电子电信—物理电子学]