ECR-PECVD制备n型微晶硅薄膜的研究  

Preparation of n-type Microcrystal Si:H Films by ECR-PECVD

作　　者：张学宇[1,2] 吴爱民[1,2] 冯煜东[3] 胡娟[1,2] 岳红云[1,2] 闻立时[1,4] 

机构地区：[1]大连理工大学三束材料改性教育部重点实验室,大连116024 [2]大连理工大学材料科学与工程学院,大连116024 [3]兰州空间技术物理研究所表面工程技术国家级重点实验室,兰州730000 [4]中国科学院沈阳金属研究所,沈阳110016

出　　处：《人工晶体学报》2010年第4期852-856,共5页Journal of Synthetic Crystals

基　　金：教育部留学回国人员科研启动基金(200611AA03);辽宁省原材料特种制备技术重点实验室基金(2005100A05);辽宁省教育厅高等学校科技研究项目资助;中央高校基本科研业务费专项资金资助(No.DUT10JN08)

摘　　要：用电子回旋共振等离子体增强化学气相沉积(ECR-PECVD)的方法制备了磷掺杂微晶硅薄膜材料。通过Hall,Raman光谱和XRD的测试分析,研究了衬底温度和磷烷流量对掺杂薄膜组织结构和电学性能的影响。根据AFM照片分析了薄膜的表面形貌,进而推测了薄膜的内部组成。实验发现:衬底温度在250℃时,磷烷的加入会大大降低薄膜的晶化率。衬底温度提高到350℃后这种影响明显下降。薄膜的载流子浓度和电导率受薄膜晶化率影响明显,衬底温度的升高对薄膜电学性能提高有较大帮助。Phosphorus-doped microcrystal silicon film was prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition（ ECR-PECVD）. The effects of substrate temperature and flow rate of doping gas on the microstructures and electrical properties of the films were investigated using Hall system,Raman spectroscopy and X-ray diffraction. The surface morphology of the films was observed by atomic force microscopy. The results show that PH3 adding diluted by hydrogen reduce formation of an amorphous phase when the substrate temperature is 250 ℃,and this effect become feeble when the temperature goes up to 350 ℃. The crystalline fraction impacts the concentration of charge carriers and the resistivity of the films. With the increase of substrate temperature,the electrical properties can be improved.

关 键 词：ECR-PECVD 磷掺杂 微晶硅薄膜 霍尔测量 

分 类 号：O484[理学—固体物理]