InAs单晶衬底的表面形貌和化学成分分析  

Analysis of Surface Morphology and Chemical Composition of InAs Single Crystal Substrate

作　　者：胡炜杰[1] 赵有文[1] 段满龙[1] 王应利[1] 王俊[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《人工晶体学报》2010年第4期878-882,共5页Journal of Synthetic Crystals

摘　　要：利用原子力显微镜(AFM)、X射线光电子能谱(XPS)和俄歇电子能谱(AES)分别研究了InAs单晶抛光片的表面形貌和化学构成。结果表明:机械化学抛光工艺条件和清洗腐蚀过程对InAs单晶抛光片表面的化学组分构成和表面粗糙度有很大的影响。通常情况下,InAs单晶抛光片的表面氧化层中含有In2O3、As2O5、As2O3及元素As,而随着As的挥发,使抛光片表面化学计量比明显富铟。通过适当的化学处理控制其表面的化学组分,减小了表面粗糙度,从而获得材料外延生长所要求的开盒即用InAs单晶衬底。InAs single crystal polished wafers were analyzed by using atomic force microscope（ AFM） ,Xray photoelectron spectroscopy（ XPS） and Auger electron spectroscopy（ AES） ,respectively. Depending on the chemical mechanical polishing process and cleaning procedure,InAs single crystal polished wafers exhibit different surface composition and large surface roughness. Under normal circumstance,InAs single crystal polished wafer surface oxide layer contains In2O3,As2O5,As2O3 and elements As. With the volatile of element As,the surface stoichiometry becomes indium-rich. After appropriate chemical treatment,the wafer surface chemical composition is controlled and the surface roughness is reduced. In this way,EPI-Ready InAs single crystal substrates required by epitaxial growth is obtained.

关 键 词：InAs单晶 衬底 表面 

分 类 号：O472[理学—半导体物理]