立式MOCVD反应室中一种刻槽基座的热分析  

Thermal Analysis of Susceptor Structure with Ring Groove in Vertical MOCVD Reactor

作　　者：李志明[1] 郝跃[1] 张进成[1] 陈炽[1] 薛军帅[1] 常永明[1] 许晟瑞[1] 毕志伟[1] 

机构地区：[1]西安电子科技大学微电子学院 宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《人工晶体学报》2010年第4期1072-1077,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金重点项目(No.60736033);国防预研基金(No.51308030102)

摘　　要：在立式感应加热的氮化物MOCVD反应室中,提出了一种刻槽结构的基座;利用有限元法,给出了使衬底温度分布最均匀的槽的位置和大小。与传统的基座相比,这种刻槽优化后的基座,使衬底温度分布的均匀性显著提高。另外,通过对基座温度随加热时间变化的分析,发现刻槽基座的热传导规律,即刻的槽改变了基座中感应产生热量的热传导方向,衬底中的热量是由槽上下基座部分传递而来的,且随时间的增大,基座的温度趋于恒定,衬底的温度趋于均匀,均匀的衬底温度有利于提高生长薄膜的质量。A susceptor structure with a ring groove was proposed in the vertical nitride MOCVD reactor by induction heating. Using finite element method,the location and size of the groove in the susceptor which made the temperature distribution in the wafer uniform was obtanied. Compared with the conventional susceptor,the temperature distribution in the wafer on this susceptor is improved obviously. In addition,The law of heat transfer in this susceptor was discorved by the analysis of the temperature in it changing with the heating time. Namely,the groove changes the directions of the thermal transport in the susceptor. The heat in the wafer is conducted from the regions on and under the groove of the susceptor. With time increasing,the temperature in the susceptor approaches constant and that in the wafer becomes uniform,which contributes to improve the quality of the film growth.

关 键 词：MOCVD 感应加热 热分析 基座 

分 类 号：TB43[一般工业技术]