CMOS负阻单元逻辑电路及其发展前景  

Logic Circuits Composed by CMOS NDR Elements and Their Development Prospect

作　　者：郭维廉[1,2] 牛萍娟[1] 李晓云[1] 刘宏伟[1] 谷晓[1] 毛陆虹[2] 张世林[2] 陈燕[2] 王伟[3] 

机构地区：[1]天津工业大学信息与通信工程学院,天津300160 [2]天津大学电子信息工程学院,天津300072 [3]中国科学院半导体研究所,北京100083

出　　处：《微纳电子技术》2010年第8期461-469,506,共10页Micronanoelectronic Technology

摘　　要：在回顾了多值逻辑(MVL)电路的优点、分析了共振隧穿器件(RTD)电路的特点和比较了各种类型负阻器件性能的基础上,提出了利用CMOS型负阻单元作为基础性器件设计并实现CMOS型逻辑电路的新概念,并指出了此研究领域的几个重点研究内容和方向。Based on the review of the advantages of the multiple-valued logic（MVL）electronic circuits,the analysis of the resonant tunneling device（RTD）circuits features and the comparisons of various negative differential resistance（NDR）devices,the new design and realization concepts of logic circuits by using the CMOS NDR element as a basic device were proposed.And some key research subjects and directions in these areas were indicated.

关 键 词：CMOS工艺 多值逻辑(MVL) 共振隧穿器件(RTD) 负阻器件 逻辑电路设计 自锁特性 

分 类 号：TN313.2[电子电信—物理电子学] TN312.2