合肥光源真空室内壁镀TiZrV吸气剂薄膜的研究  

Deposition of TiZrV non-evaporable getter film onto the inner wall of vacuum chamber of Hefei Light Source

作　　者：张波[1] 王勇[1] 尉伟[1] 范乐[1] 王建平[1] 张玉方[1] 李为民[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,安徽合肥230029

出　　处：《真空》2010年第4期39-42,共4页Vacuum

基　　金：国家自然科学基金委资助课题(No.10675119)

摘　　要：TiZrV合金在180℃下加热24 h即可激活,是迄今发现的激活温度最低的非蒸散型吸气剂,已在国外一些粒子加速器得到应用。采用直流磁控溅射法,氩气作为放电气体,成功的在不锈钢管道内壁获得了TiZrV薄膜。薄膜中TiZrV之比为3:3:4左右,位于"低激活温度区"。利用三段一米长的螺线管串联所产生的磁场维持放电,完成了对三米长的波荡器真空室的镀TiZrV薄膜处理,并已安装在合肥光源储存环上,目前运行情况正常。Titanium-Zirconium-Vanadium（TiZrV） non-evaporable getter（NEG）,which can be fully activated after 24hr heating at 180℃,has been applied in some particle accelerators owing to the outstanding vacuum performance.In our experiments,TiZrV films have been deposited onto the inner face of stainless steel pipes via DC sputtering using argon gas as the sputtering gas.The average composition of TiZrV films deposited under various conditions was Ti 30%,Zr 30%,and V 40%,which is in the＂low activation temperature zone＂.The three-meter long undulator chamber has been coated with TiZrV film and the magnetic field to sustain the glow discharge was generated by three connected one-meter long solenoids.The TiZrV-coated chamber has been installed in the storage ring of Hefei Light Source and is in normal operation.

关 键 词：TiZrV薄膜 非蒸散型吸气剂 直流磁控溅射 粒子加速器 

分 类 号：TB741[一般工业技术—材料科学与工程] TL503.7[一般工业技术—真空技术]