GaAs集成电路辐照效应试验研究  

Research of GaAs IC Radiation Effect

作　　者：王文君[1] 田国平[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2010年第8期803-805,共3页Semiconductor Technology

摘　　要：GaAs集成电路因其良好的电性能和抗辐射能力,广泛应用于各领域,尤其是航天航空方面。电路的抗辐射能力与设计和工艺密切相关,因此对3 bit GaAs加权相加电路进行了全面的辐照效应试验技术研究,主要对该电路进行中子、γ总剂量和γ剂量率辐照试验研究,对GaAs集成电路的耐辐照性进行了探讨,为建立中等规模耐辐射GaAs IC的电路设计、工艺制造和测试技术平台奠定了基础。GaAs IC is widely used in many fields,especially in spaceflight and navigation,because of its good electrics ability and anti-radiation effect.The anti-radiation ability of circuit is close connected with circuit design and manufacture process.The research and experiments of 3 bit GaAs phase digital to analog converter of radiation effect were carried out,mainly on the eutron-irradiated,γ-ray total dose and high velocity dose irradiate.It can be a basis of technical platform for design,manufacture and test of medium-scale integration GaAs IC on anti-radiation.

关 键 词：砷化镓 集成电路 抗辐射 辐射效应 试验 

分 类 号：TN820.1[电子电信—信息与通信工程]