宽带GaN单片功率放大器研究  

Investigation of GaN Broadband Monolithic Power Amplifier

作　　者：王会智[1] 闫锐[1] 刘波[1] 冯志红[1] 何庆国[1] 蔡树军[1] 

机构地区：[1]专用集成电路国家重点实验室,石家庄050051

出　　处：《半导体技术》2010年第8期813-815,共3页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60890192;60876009)

摘　　要：基于GaN HEMT器件在微波功率方面的优越性能,设计并实现了宽带GaN单片功率放大器。简述了AlGaN/GaN异质结构的优势以及现状,同时结合热分析的方法给出了所选GaNHEMT器件的基本尺寸和性能,并采用ICCAP提取了合适的大信号模型,通过器件性能优选拓扑结构,最终运用宽带匹配的方法并结合较先进的仿真软件设计了一款GaN宽带单片功率放大器。测试结果表明,单片放大器脉冲工作方式下在2~7 GHz频带内,小信号增益G〉18 dB,输入回损〈-10 dB,脉冲饱和输出功率Po〉5 W,功率增益GP〉15 dB,典型功率附加效率25%（测试条件为脉宽100μs,占空比10%）。GaN HEMT器件具有较高的功率密度和良好的宽带特点。Based on the excellent power performance of GaN HEMT at microwave,a GaN broadband monolithic power amplifier was designed and fabricated.The advantages and status of AlGaN/GaN structure are described.The right size of GaN HEMT was selected by analyzing the self-heating effect.An accurate large-signal model was extracted with ICCAP.The broadband power amplifier MMIC was designed by advanced software.The test results show that the saturation output power is 5 W with a pulse width of 100 μS and a duty cycle of 10%,and the typical power added efficiency（PAE） is 25% from 2 GHz to 7GHz.The amplifier achieves a small-signal gain larger than 18 dB and a return loss less than 10 dB,it reveals that GaN HEMT has high power density and good wideband performance.

关 键 词：ALGAN/GAN 宽带 单片 放大器 脉冲 

分 类 号：TN323.4[电子电信—物理电子学] TN722.75