典型光电器件^60Coγ射线辐照试验研究  

Study of irradiation test on typical optoelectronic device by ^(60)Co γ-rays

作　　者：刘伟鑫[1] 徐导进[1] 吾勤之[1] 

机构地区：[1]上海航天技术研究院第八O八研究所,上海201109

出　　处：《核技术》2010年第8期584-587,共4页Nuclear Techniques

摘　　要：用60Coγ射线对GaAlAs异质结红外发光二极管OP224和NPN型Si光电三极管OP604进行了电离辐照试验,分析了试验器件在60Coγ射线辐照下氧化物陷阱电荷和界面态陷阱电荷的积累效应。结果表明,随着辐照累积剂量的增加,OP224正向电流的最大值逐渐下降,红外光强度逐渐衰减;OP604的暗电流逐渐增大,光电流逐渐下降。Irradiation test of GaAIAs heterojunction infrared emitting diode OP224 and NPN-silicon phototransistor OP604 were performed by using ^60Coγ-rays. The cumulative effect of oxide-trap charge and interface-trap charge under ^60Coγ-rays irradiation were analyzed. The results showed that as the irradiation dose increased, the maximum forward current and the infrared light intensity of GaAIAs heterojuncfion infrared emitting diode OP224 gradually decreased; the dark current of NPN-silicon phototransistor OP604 gradually increased, and the photocurrent decreased.

关 键 词：光电器件 电离辐照效应 氧化物陷阱电荷 界面态陷阱电荷 

分 类 号：TN21[电子电信—物理电子学] TN36