直流磁控溅射法在管道内壁镀TiZrV薄膜  

Deposition of TiZrV coatings onto inner wall of stainless steel pipe by DC magnetron sputtering

作　　者：张波[1] 王勇[1] 尉伟[1] 范乐[1] 王建平[1] 张玉方[1] 李为民[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,合肥230029

出　　处：《强激光与粒子束》2010年第9期2124-2128,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(10675119)

摘　　要：用氩气作为放电气体,采用直流磁控溅射法,成功地在不锈钢管道内壁获得了TiZrV薄膜。分别利用能量弥散X射线谱和X射线光电子能谱测量薄膜的成分组成,应用扫描电子显微镜和X射线衍射仪对薄膜进行了测试,并对TiZrV的二次电子产额进行了测量。测试结果表明:TiZrV的成分基本保持在Ti原子分数为30%,Zr原子分数为30%,V原子分数为40%左右,位于"低激活温度区"内;薄膜具有无定形的结构,由微小的纳米晶粒组成;加热激活后TiZrV的二次电子产额有所下降,其峰值由2.03降到1.55,低于不锈钢和无氧铜。Titanium-zirconium-vanadium（TiZrV） non-evaporable getter（NEG）,which can be fully activated after 24 hours heating at 180 ℃,has been applied in some particle accelerators owing to its outstanding vacuum performance. In our experiments,TiZrV films were deposited onto the inner wall of stainless steel pipes via DC sputtering using argon gas as the sputtering gas. Witness samples were investigated by scanning electron microscopy（SEM）,energy dispersive X-ray spectroscopy（EDS）,X-ray photoelectron spectroscopy（XPS） and X-ray diffraction（XRD）. The average composition of TiZrV samples deposited under various conditions was Ti 30%,Zr 30%,and V 40%,which is in the ＂low activation temperature zone＂. XRD results show that TiZrV films are amorphous and composed of nanocrystalline grains. The maximum secondary electron yields（SEYs） of TiZrV before and after heating treatment are 2.03 and 1.55 respectively,which are lower than those of stainless steel and oxygen free copper.

关 键 词：TiZrV薄膜 非蒸散型吸气剂 直流磁控溅射 粒子加速器 

分 类 号：TB741[一般工业技术—材料科学与工程] TL503.7[一般工业技术—真空技术]