高能光子在锗中能量沉积的蒙特卡罗模拟  

Monte Carlo Simulation of Energy Deposition Induced by Energetic Photon in Ge

作　　者：陈世彬[1] 姚香檀[1] 

机构地区：[1]西安工业大学数理系

出　　处：《西安工业大学学报》2010年第4期307-309,共3页Journal of Xi’an Technological University

摘　　要：电离能量沉积影响半导体器件的瞬时响应特性,研究高能光子在锗中电离能量沉积及其分布对锗器件的抗电离辐射加固研究具有重要的指导意义.利用高能光子反应截面数据库及蒙特卡罗模拟方法,计算了高能光子在锗中的电离能量沉积及其分布,给出了模拟过程的具体抽样方法.计算结果表明,在微电子器件的尺寸范围内,能量沉积与锗厚度成线性关系,每2 MeV光子的能量沉积约为1.98 eV/μm.通过对结果的分析,证明该方法是可行的.Ionizing energy deposition（IED） can influence on the instantaneous characteristic of semiconductor devices,the research of IED and its distribution induced by high energy photons in Ge has a crucial significance to those of anti-radiation and reinforcement of Ge devices.Based on the cross-section dada base and Monte Carlo method,the IED and its distribution in germanium caused by 2 MeV photon were calculated in this paper.The simulation and detailed sampling method were presented.Obtained results lead to conclude that the energy deposition is linear with Ge thickness within the range of micro-electronics,and that deposit is about 1.98 eV/μm for each photon.The analyses of the results indicates the simulation feasible.

关 键 词：Γ辐射 锗 蒙特卡罗 能量沉积 

分 类 号：O242.2[理学—计算数学]