硼扩散片弯曲度的控制技术研究  

Study on Controlling of the Bow in Boron Diffusion Silicon Wafer

作　　者：王春梅[1] 佟丽英[1] 史继祥[1] 王聪[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2010年第8期26-27,44,共3页Equipment for Electronic Products Manufacturing

摘　　要：对硼扩散片弯曲度的控制技术进行了研究。结果发现单面扩散后硅片的弯曲度比双面扩散的弯曲度大,晶锭加工之前的热处理工艺有助于弯曲度的改善。在单面减薄后对硅片进行碱处理工艺,进一步改善了扩散片的弯曲度。通过对硅单晶进行热处理、以及对硅扩散片进行碱处理等一系列措施,使扩散片的弯曲度有了较大幅度的改善。In this paper, the technology of controlling bow in boron diffusion silicon wafer was studied. The results showed that the bow in one-side diffusion silicon wafer is much larger than in double-side diffusion silicon wafer. The process of heat treatment in silicon crystal rods helped to improve the bow. Through a series of methods on the silicon crystal,the boron diffusion silicon wafer was improved markedly.

关 键 词：硼 扩散 硅片 弯曲度 

分 类 号：TG156.87[金属学及工艺—热处理]