酞菁铜有机薄膜肖特基二极管的研制  

Investigation of CuPc Organic Film Schottky Diode

作　　者：张健[1] 王东兴[1] 

机构地区：[1]哈尔滨理工大学应用科学学院,黑龙江哈尔滨150080

出　　处：《哈尔滨理工大学学报》2010年第4期38-41,共4页Journal of Harbin University of Science and Technology

基　　金：黑龙江省科技攻关项目(GC04A107)

摘　　要：提出了一种基于有机半导体材料制作肖特基二极管的方法,通过真空气相沉积工艺依次将金属铝,酞菁铜和金属铜镀在玻璃基片上.在室温下测试该二极管的电流-电压(I-V)特性发现,其整流系数可达103.根据实验所得的电容-电压(C-V)的测试结果,得到该二极管的肖特基势垒高度在0.7V.An effective preparation method is proposed for a type of organic/metal Schottky diode.A metal electrode Al,an organic film CuPc,and a metal electrode Cu are deposited on the glass respectively with a simple vacuum evaporation technology.The I-V properties of the diode,measured at room temperature,show that the commutating coefficient of the devices reaches 103.According to standard Schottky theory and the capacitance-voltage,we can conclude that the organic Schottky potential is about 0.7V.

关 键 词：薄膜二极管 有机半导体 气相沉积 电容-电压 

分 类 号：TN321.5[电子电信—物理电子学]