磁控溅射工艺对VO_x薄膜结构和性能的影响  

Influence of Magnetron Sputtering Process on Properties and Structures of VO_x Thin Films

作　　者：聂竹华[1] 李合琴[1] 储汉奇[1] 都智[1] 宋泽润[2] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009 [2]中国电子科技集团公司43研究所,安徽合肥230022

出　　处：《红外》2010年第9期9-13,共5页Infrared

基　　金：国家"973"项目(2008CB717802);安徽省自然科学基金(090414182);安徽省高校自然科学基金(KJ2009A091)

摘　　要：以高纯氧和高纯氩为气源,通过改变薄膜的制备工艺,用直流磁控溅射法在玻璃和单晶硅片上制备了VO_x薄膜,并对其进行了退火处理。借助LCR测试仪和X射线衍射仪,对VO_x薄膜的电阻温度系数、晶体结构进行了检测。结果表明,当溅射气压为1.5Pa,功率为100W,时间为1h,氧氩比为0.8:25时,经450℃退火后,玻璃基片上制备的薄膜的电阻温度系数(TCR)超过-0.02/℃,其结构和性能最好。同时对比了玻璃和单晶硅基片对VO_x薄膜的生长、性能和结构的影响。当氧氩比为0.8:25时,单晶硅片上制得的VO_x薄膜的质量和性能最好。Through the modification of film fabrication processes,vanadiaum oxide（VO_x） films were fabricated on glass and monocrystal silicon substrates by using a DC magnetron sputtering equipment with high-purity oxygen and arg.Then,the VO_x films were annealed and their structures and electric properties were detected by using a LCR meter and a X-ray diffraction instrument.The results showed that the TCR of the VO_x film on the glass substrate exceeded-0.02/℃when the gas pressure of 1.5Pa, the power of 100W,the sputtering time of 1 hour and the ratio of oxygen to argon of 0.8：25 were used after they were annealed at 450℃.By comparing the VO_x film on the glass substrate with that on the monocrystal substrate,it was found that the VO_x film on the monocrystal substrate had better quality and properties.

关 键 词：直流磁控溅射 退火 VO_x薄膜 工艺 电阻温度系数 

分 类 号：TB43[一般工业技术]