ZnO:Ag薄膜的生长及电学性质研究  

Growth and electrical properties of ZnO thin films with Ag dopant

作　　者：隋成华[1] 徐天宁[1] 郑东[1] 蔡霞[1] 夏娟[1] 原子健[2] 

机构地区：[1]浙江工业大学理学院,浙江杭州310024 [2]浙江大学物理学系,浙江杭州310027

出　　处：《红外与激光工程》2010年第4期702-705,共4页Infrared and Laser Engineering

基　　金：国家自然科学基金资助项目(60777034);浙江省教育厅资助项目(Y200803369)

摘　　要：p-型ZnO材料因在紫外光电器件方面的潜在应用价值而受到人们的广泛关注。采用反应电子束蒸发法在白宝石上生长了ZnO：Ag薄膜,生长温度范围从150~250°C。研究表明：在该温度范围生长的ZnO：Ag薄膜具有n-型导电特征,但通过退火可以实现p-型导电。当退火温度为300°C时,ZnO：Ag薄膜的空穴浓度为2.8×1016 cm-3,电阻率为1.0 kΩ.cm,空穴的迁移率为0.22 cm2/V.s。当在350°C下进一步退火,薄膜仍为p-型导电,但空穴浓度减小为2.1×1015 cm-3,电阻率增大到5.0 kΩ.cm。通过对ZnO：Ag薄膜的X射线衍射谱分析发现,ZnO：Ag电学性质的变化与薄膜中Ag＋替代Zn2＋的浓度有关。p-type doping ZnO has attracted great attention because of its potential application for nextgeneration ultraviolet optoelectronic devices.ZnO：Ag thin films were deposited on sapphire substrates,using Ag2O as a silver dopant by reactive electron beam evaporation technique.The growth temperature ranged from 150 ° C to 250 ° C.The grown films showed n-type conduction.After post anneal with temperature higher than 250 °C,a conversion of p-type from n-type conductivity was observed in ZnO：Ag films.The p-type ZnO：Ag films annealed at 300 °C revealed a hole concentration of 2.8×1016 cm-3 with resistivity and mobility of 1.0 kΩ.cm and 0.22 cm2/V.s.Further annealing at higher temperature （350 °C）,the hole concentration in ZnO：Ag films decreased to 2.1×1015 cm-3 with resistivity increasing to 5.0 kΩ.cm,the films still manifested p-type conduction.The change of conduction behavior of ZnO：Ag films is attributed to Ag ＋ concentration substituting for Zn2 ＋ sites,and confirmed by X-ray diffraction specta of ZnO：Ag films.

关 键 词：p-型导电 ZNO薄膜 AG2O 反应电子束蒸发 

分 类 号：O484.42[理学—固体物理]