增强型GaN绝缘栅HEMT线性电荷控制解析模型  

An Analytic Linear Charge Control Model for Enhancement Mode AlGaN/GaN Insulated Gate HEMTs

作　　者：卢盛辉[1] 杜江锋[1] 罗谦[1] 于奇[1] 周伟[1] 夏建新[1] 杨谟华[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《固体电子学研究与进展》2010年第3期323-326,440,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(60576007)

摘　　要：基于MIS理论和含极化的泊松方程,应用费米能级与二维电子气密度线性近似,并考虑计入了绝缘体/AlGaN界面的陷阱或离子电荷,导出建立了适用于增强型且兼容耗尽型AlGaN/GaN绝缘栅HEMT的线性电荷控制解析模型。研究表明,Insulator/AlGaN界面陷阱密度在1013cm-2数量级;基于该模型的器件转移特性的理论结果与器件的实测转移特性数据比较符合。该模型可望用于器件性能评估和设计优化。With using linear approximation of Fermi level versus two dimensional electron gas density and considering the trap or ion charge at insulator/AlGaN interface, an analytic linear charge control model based on MIS theory and Poisson equations including polarization is devel- oped for enhancement mode as well as depletion mode AlGaN/GaN insulated gate HEMTs. The investigation shows that the trap density at Insulator/AlGaN interface is in the order of magnitude of 10^13cm^-2 and the theoretical results of transfer characteristics based on the present model show good agreement with the measured data. The model can be used to evaluate the performance and optimize the design.

关 键 词：线性电荷控制解析模型 增强型绝缘栅高电子迁移率晶体管 铝镓氮/氮化镓 

分 类 号：TN386.2[电子电信—物理电子学]