CVD金刚石薄膜金属化及其与金属的焊接研究  

Study of Thin Film Metallization and Welding on CVD Diamond

作　　者：李新宇[1] 高陇桥[1] 刘征[1] 郭辉 

机构地区：[1]北京真空电子技术研究所,北京100015 [2]河北激光研究所,石家庄050081

出　　处：《真空电子技术》2010年第4期43-46,共4页Vacuum Electronics

摘　　要：针对CVD金刚石在微波管中的应用特点,提出一种金刚石膜表面金属化新工艺。该工艺采用Ti/Mo/Ni体系和磁控溅射镀膜方法,与无氧铜焊接获得了良好的接合性能,封接件平均抗拉强度大于113.7 MPa。X射线衍射分析证实:经820℃真空热处理,金刚石与钛膜界面形成Ti8C5和TiO。This paper advanced a new technique about the diamond films surface metalizing for the pur pose of microwave tube applications. Ti/Mo/Ni muhilayer have been deposited on diamond films by mag netron sputtering, which joined with copper and obtained a good jointing capability, the sealing parts aver age tensile strength was above on 113.7 MPa. XRD approved： after 820℃ vacuum heat treatment, inter face between diamond and Ti formed Ti8C5 and TiO.

关 键 词：CVD金刚石 磁控溅射 接合 抗拉强度 

分 类 号：TB756[一般工业技术—真空技术]