石墨上多晶硅薄膜的制备及择优取向的调控  

Fabrication of Polycrystalline Silicon Thin Films on Graphite Substrates and Control of the Preferred Orientation of Films

作　　者：施辉伟[1] 陈诺夫[2,3] 黄添懋[1] 尹志岗[1] 汪宇[1] 张汉[1] 应杰[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083 [2]华北电力大学可再生能源学院,北京102206 [3]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《微纳电子技术》2010年第9期548-551,559,共5页Micronanoelectronic Technology

摘　　要：利用磁控溅射在石墨衬底上制备了非晶硅薄膜,并使用快速热退火对薄膜进行了晶化处理。XRD分析表明,直接溅射沉积在石墨衬底上的硅薄膜经过快速热退火后具有高度的(220)择优取向。通过在硅薄膜和石墨衬底界面处引入一定厚度的ZnO中间层,晶化后的多晶硅薄膜择优取向实现了从(220)向(400)的转变,从而非常有利于将成熟的制绒工艺应用于该材料体系的电池制备过程中。对于择优取向的转变提出了解释,认为Si(100)面和ZnO(001)面晶格匹配是主要原因。喇曼分析表明ZnO中间层的引入提高了多晶硅薄膜的晶体质量。The amorphous silicon thin films were deposited on graphite substrates by magnetron sputtering, and the films were recrystallized by rapid thermal annealing. XRD results indicate that the silicon thin film directly prepared on the graphite substrate has highly （220） preferred orientation after the rapid thermal annealing. A certain thickness of the ZnO intermediate layer was introduced between the silicon film and graphite substrate, which changed the preferred orienta- tion of the films from （220） to （400）. Thereby it is very useful for the application of the mature surface texture technology to the preparation of solar cells. The explanation was proposed for the change of the preferred orientation, and the lattice matching of Si （100） plane and ZnO （001） plane was the main reason. Finally, Raman spectra show that the ZnO intermediate layer improves the quality of the polycrystalline silicon thin film.

关 键 词：多晶硅薄膜 石墨 快速热退火 氧化锌 择优取向 

分 类 号：TN304.055[电子电信—物理电子学]