杂质不完全离化对MISiC气体传感器的影响  

Influence of dopant incomplete ionization on MISiC gas sensor

作　　者：王巍[1] 代作海[1] 王晓磊[1] 唐政维[1] 徐洋[2] 王平[2] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065 [2]重庆邮电大学自动化学院,重庆400065

出　　处：《传感器与微系统》2010年第9期67-69,73,共4页Transducer and Microsystem Technologies

基　　金：教育部重点实验室开放项目(20090F01);重庆市自然科学基金资助项目(CSTC2006BB2364);工信部电子发展基金资助项目

摘　　要：研究了杂质不完全离化对金属—绝缘体—碳化硅(MISiC)传感器性能的影响。考虑到Pool-Frenkel效应和外加电场的作用,建立了MISiC器件空间电荷区泊松方程。运用准中性近似,对所建立的泊松方程进行数值计算,得到了空间电荷区的电势分布,进而得到MISiC传感器的I-V与C-V特性。实验结果表明:室温下SiC器件中杂质不完全离化,随着温度的升高,杂质离化率增大。在外加电场的作用下,杂质的离化率增加,并最终导致MISiC器件I-V与C-V曲线的移动。The influence of incomplete ionization on characteristics of metal-insulator-SiC （MISiC） gas sensor is studied. Possion＇ s equation in space charge region of MISiC devices is built up by taking Pool-Frenkel effect and electric field into account. The potential distribution of MISiC is achieved by the numerical solution of the Possion＇ s equation, then the I-V and C-V characteristics of MISiC gas sensor are also got. The results show that the dopant in SiC can＇ t be completely ionized at room temperature and the ionized ratio will be increased as temperature rises. In addition, the ionized ratio will be increased when the electric field exists, which eventually causes the shift of the device＇ s I-V and C-V characteristics curve.

关 键 词：金属-绝缘体-碳化硅 杂质离化 泊松方程 Pool-Frenkel效应 气体传感器 

分 类 号：TN384[电子电信—物理电子学]