富硅氧化硅微盘的制备研究  

Fabrication of Microdisk Based on Silicon Rich Silicon Oxide

作　　者：陈曜[1] 

机构地区：[1]广西大学物理科学与工程技术学院,南宁530004

出　　处：《半导体技术》2010年第9期899-902,共4页Semiconductor Technology

基　　金：广西大学科研基金资助项目(XBZ090951)

摘　　要：采用等离子体增强化学气相沉积(PECVD)及高温退火工艺制备了富硅氧化硅(SRSO)薄膜材料。喇曼光谱仪探测表明,该材料具有较高的光致发光(PL)效率,并在750 nm波长处达到发光峰值。采用电子束光刻(EBL)及电感耦合反应离子刻蚀(ICP)技术在Si衬底上制备了基于富硅氧化硅材料的光学微盘结构。为防止Si衬底的光吸收,在反应离子刻蚀(RIE)系统中研究出一种各向同性的刻蚀工艺,有效使微盘与Si衬底分离。扫描电镜(SEM)探测表明,该工艺具有良好的尺寸控制及高稳定性。利用该工艺,成功制备了直径为4μm的富硅氧化硅微盘器件。Silicon rich silicon oxide （SRSO） thin film was prepared by PECVD and high temperature annealing. High photoluminescence （PL）efficiency of the thin film was detected by Raman spectrometer with emission peak at 750 nm wavelength. Microdisk based on the SRSO thin film was fabricated on silicon wafer utilizing electron beam lithography （EBL） and etch technology. An isotropic dry etch process was developed to produce a silicon pedestal supporting the microdisk with high stability and size controllability. By using this process, SRSO mierodisk as small as 4μm in diameter was achieved.

关 键 词：富硅氧化硅 光致发光 各向同性 微盘 微加工 

分 类 号：TN305.7[电子电信—物理电子学]