比较2种溅射方法镀制的氧化硅薄膜  

Comparison of reactive magnetron and reactive ion-beam sputtering for deposition of silicon oxide thin film

作　　者：朱昌[1] 米高园[1] 达斯坦科 格拉索夫 扎瓦斯基 

机构地区：[1]西安工业大学,陕西西安710032 [2]白俄罗斯国立信息与无线电大学,白俄罗斯明斯科220013

出　　处：《应用光学》2010年第5期855-859,共5页Journal of Applied Optics

摘　　要：比较了磁控反应溅射（RMS）法与离子束反应溅射（RIBS）法沉积得到的氧化硅薄膜的光学特性,并确定了其对折射率n、消光系数k、沉积速率和混合工作气体Ar/O2中氧含量的依赖性关系。工作气体中O2含量大于15%时通过RMS法沉积的氧化硅薄膜在0.63μm波长折射率约为1.52-1.55,消光系数低于10^-5。当O2含量在80%以上时RIBS方法沉积氧化硅薄膜的折射率n=1.52-1.6,消光系数低于10^-5。用RMS沉积SiO2薄膜,当氧气量超过15%时发生反应模式,此时沉积速率下降近5倍。而用RIBS时,沉积速率并不依赖氧气在混合工作气体中的含量。The optical characteristics of silicon oxide thin films deposited by the reactive magnetron（RMS） method were compared to those deposited by the reactive ion-beam sputtering（RIBS） method.Dependence of refractive index n,extinction coefficient k and deposition rate on oxygen concentration in Ar/O2 working gas mixture were determined.Silicon oxide films with the refractive index of 1.52～1.55 and extinction coefficient less 10-5 at the wavelength of 0.63 μm were deposited by RMS method with O2 content greater than 15% of working gas mixture.Silicon oxide films with refractive index of 1.52～1.6 and extinction coefficient less 10-5 were deposited by RIBS method with O2 content more than 80% of working gas mixture.In the case of RMS method,the SiO2 film deposition rate decreases almost 5 times when the process is switched to the reactive mode（more than 15% O2）.On the contrary,in the case of RIBS,the deposition rate does not depend on the O2 concentration in the working gas mixture.

关 键 词：磁控反应溅射 离子束反应溅射 折射率 消光系数 

分 类 号：TN305.92[电子电信—物理电子学] O484.4[理学—固体物理]