硅基反铁电薄膜微悬臂梁力学仿真分析  

Mechanical Simulation of Silicon-Based Antiferroelectric Thin Film Microcantilever

作　　者：赵振宇[1] 卢荻[1] 丑修建[1] 刘俊[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室仪器科学与动态测试教育部重点实验室,山西太原030051

出　　处：《测试技术学报》2010年第5期444-448,共5页Journal of Test and Measurement Technology

基　　金：国家自然科学基金资助项目(60806039);中国博士后科学基金资助项目(20090461275);山西省基础研究计划项目(20100210023-6)

摘　　要：采用双层微悬臂梁理论模型,对基于反铁电薄膜微悬臂梁驱动构件的力学行为进行分析研究.以反铁电薄膜材料体积应变=ε0.8%为设定量,实现硅基反铁电薄膜微悬臂梁结构的应变-应力载荷转化,运用AN SY S11.0对基于反铁电薄膜应变效应的硅基微悬臂梁结构进行了静态分析、模态分析和谐响应分析,通过对此微驱动结构的优化设计、仿真,得出了不同几何参数硅基微悬臂梁构件的挠度和谐振频率.从而无需进行大量的工艺流片,为大量程的微悬臂梁驱动构件的设计加工提供指导意义.The mechanical properties of microcantilever based on antiferroelectric thin film were studied by using the double-layer theory model. The volume strain of the antiferroelectric thin film ε=0.8% is considered as the initialization to realize the strain-stress load transformation.The static analysis,modal analysis and the harmonic analysis of the antiferroelectric microcantilever were done by using Ansys11.0.Through the optimizing design simulation,the displacement and the harmonic frequency of different parameters of the microcantilever were obtained.Thus without large amounts of processing,the method can provide a guidance for the design and process of large-distance microcantilever actuators.

关 键 词：反铁电薄膜(PLZT) 微悬臂梁 应变效应 力学行为 仿真分析 

分 类 号：TN304.055[电子电信—物理电子学]