硅片化学腐蚀及其在电力半导体器件中的应用  

The Chemical Corrosion for Silicon Wafer and Its Application in Power Semiconductor Devices

作　　者：谢书银[1] 

机构地区：[1]中南工业大学

出　　处：《电力电子技术》1999年第3期48-50,共3页Power Electronics

摘　　要：按照电化学原理分析硅片化学腐蚀过程，阐述了择优与非择优腐蚀的机理，研究了一套硅片化腐新工艺。这些工艺在电力半导体器件生产中得到了成功的应用。The chemical corrosion process is analyzed,and preferred orientation and no preferred orientation corrosion mecharism of silicon wafer were discussed according to electrochemistry principle.A set of new technologies of chemical corrosion was improved by using micro corrosion cleaning of silicon wafer. The chemical corrosion was found successfully aplied to producting power semiconducdor devices.

关 键 词：硅片 化学腐蚀 电力半导体器件 

分 类 号：TN303[电子电信—物理电子学]