氟化类金刚石薄膜介电性能研究  

On the dielectric properties of fluorinated diamond-like carbon films

作　　者：肖剑荣[1] 王德安[1] 梁业广[1] 

机构地区：[1]桂林理工大学理学院,广西桂林541004

出　　处：《真空》2010年第5期49-52,共4页Vacuum

基　　金：广西教育厅科研资助项目(200807MS044);桂林理工大学博士启动基金资助项目(002401003252)

摘　　要：采用射频等离子体增强化学气相沉积法制备了氟化类金刚石薄膜。利用俄歇电子能谱、绝缘电阻测试仪、耐压测试仪和QS电桥对样品组分和介电性能进行了表征、分析。结果表明：薄膜的介电常数εr在2.07~2.65之间,绝缘电阻在245 MΩ左右,击穿场强在2.1 MV/cm以上,它们与膜内F的含量密切相关。Fluorinated diamond-like carbon（F-DLC） films were deposited by radio-frequency plasma enhanced chemical vapor deposition（RF-PECVD） process.The composition and dielectric properties of the film samples were characterized by Auger electron spectroscopy（AES）,Insulation Resistance Tester,Hi-pot Tester and QS Circuit Bridge.The results showed that the film＇s dielectric constant is in the range from 2.07 to 2.65 with the insulation resistance around 245MΩ and breakdown voltage above 2.1MV/cm.They are closely related to the content of F in the films.

关 键 词：氟化类金刚石薄膜 离子体增强化学气相沉积 绝缘电阻 介电常数 

分 类 号：TN304[电子电信—物理电子学]