Characterization of the heteroepitaxial growth of 3C-SiC on Si during low pressure chemical vapor deposition  

作　　者：CHEN Da ZHANG YuMing ZHANG YiMen WANG YueHu JIA RenXu 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

出　　处：《Chinese Science Bulletin》2010年第27期3102-3106,共5页

基　　金：supported by the National Natural Science Foundation of China(60876061);the Pre-research Project(51308040302)

摘　　要：3C-SiC heteroepitaxial layers were grown on Si substrates using a horizontal,hot-wall low pressure chemical vapor deposition system.The crystal quality,surface morphology and thickness uniformity of the layers were characterized by X-ray diffraction,atomic force microcopy and Fourier transform infrared spectroscopy,respectively.Growth of the epitaxial layer was determined to follow a three-dimensional island mode initially and then switch to a step-flow mode as the growth time increases.3C-SiC heteroepitaxial layers were grown on Si substrates using a horizontal, hot-wall low pressure chemical vapor deposition system. The crystal quality, surface morphology and thickness uniformity of the layers were characterized by X-ray diffraction, atomic force microcopy and Fourier transform infrared spectroscopy, respectively. Growth of the epitaxial layer was determined to follow a three-dimensional island mode initially and then switch to a step-flow mode as the growth time increases.

关 键 词：低压化学气相沉积 SIC 生长特性 3C 傅里叶变换红外光谱 化学气相沉积系统 外延层生长 原子力显微镜 

分 类 号：TN304.24[电子电信—物理电子学] TB43[一般工业技术]