反铁磁性交换作用对p、n型掺杂的GaAs居里温度的影响  

Influence of anti-ferromagnetic exchange interaction on the Curie temperature of p,n-type doped GaAs

作　　者：关玉琴[1] 陈余[1] 赵春旺[1] 

机构地区：[1]内蒙古工业大学理学院,内蒙古呼和浩特010051

出　　处：《功能材料》2010年第A02期250-252,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10862002);内蒙古工业大学校基金资助项目(X200930)

摘　　要：居里温度与载流子浓度反铁磁性交换作用有着密切联系,定量分析反铁磁性交换作用对p型及n型GaAs材料的居里温度的影响,计算证明,反铁磁性交换作用对p型和n型掺杂的GaAs居里温度的影响有着本质的区别。p型半导体材料的居里温度仅仅与反铁磁性交换作用有关,而与掺杂浓度无关;对n型半导体居里温度与反铁磁性交换作用和掺杂浓度都有关,而且高掺杂浓度下居里温度比低掺杂浓度下居里温度低。GaAs Curie temperature depends on carrier concentration and anti-ferromagnetic exchange interaction.This paper quantitatively analyzes the Influence of anti-ferromagnetic exchange interaction on the Curie temperature of p,n-type doped GaAs.Calculations prove that influence of anti-ferromagnetic exchange interaction on the Curie temperature of p,n-type doped GaAs is essentially different：p-type semiconductor materials,the Curie temperature is only with the anti-ferromagnetic exchange interaction,but with doping concentration has nothing to do;n-type semiconductor,the Curie temperature depends on the anti-ferromagnetic exchange interaction and doping concentration,and the high doping concentration the Curie temperature than low doping concentration is low.

关 键 词：稀磁半导体材料 反铁磁性交换作用 居里温度 p、n型掺杂 掺杂浓度 

分 类 号：O471.2[理学—半导体物理]