双外延基区4H-SiC BJTs的建模与仿真(英文)  

Modeling and Simulation of Double Base Epilayer 4H-SiC BJTs

作　　者：张倩[1] 张玉明[1] 张义门[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,陕西西安710071

出　　处：《计算物理》2010年第5期771-778,共8页Chinese Journal of Computational Physics

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.60876061);Pre-research Project(Project No.51308040302)

摘　　要：基于4H-SiC的材料特性,对具有双外延基区结构的4H-SiC双极晶体管进行研究.通过分析该结构在基区内部形成的自建电场以及基区渡越时间,利用正交试验的方法,基于各种器件二维模型,对该器件结构进行数值计算,并进行平均极差分析.计算结果表明,该器件的共发射结电流增益最高可达72,具有负温度系数,并且在一个很宽的集电极电流范围内该特性保持不变.With characteristics of 4H-SiC, a double base epilayer 4H-SiC bipolar junction transistors （BJTs） is investigated. By analyzing build-in electric field in the base region and the base transit time, the device is numerically calculated in two-dimensional models according to orthogonal experiments. A mean range analysis is made to find optimized structure of 4H-SiC BJTs. It shows that common emitter current gain with negative temperature coefficient is about 72 and it remains high in a wide range of collector current.

关 键 词：4H—SiC 双极晶体管 基区自建电场 基区渡越时间 

分 类 号：TN324.1[电子电信—物理电子学] TN325.3