金属基NiCr-NiSi薄膜热电偶的制备及性能研究  

Fabrication and performances of NiCr-NiSi thin film thermocouples on metal substrates

作　　者：姚飞[1] 蒋洪川[1] 张万里[1] 刘兴钊[1] 唐磊[2] 于浩[2] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054 [2]中国燃气涡轮研究院测控室,四川江油621700

出　　处：《电子元件与材料》2010年第9期6-8,共3页Electronic Components And Materials

基　　金：国防预研基金资助项目

摘　　要：采用电子束蒸发和磁控溅射法在Ni基超合金基片上制备NiCr-NiSi薄膜热电偶,薄膜热电偶依次由Ni基超合金基片、NiCrAlY过渡层、Al2O3热氧化层、氧化铝绝缘层、NiCr-NiSi薄膜热电偶层以及氧化铝保护层构成。对此薄膜热电偶样品的静态标定结果表明,所制备的金属基NiCr-NiSi薄膜热电偶在25～600℃内具有良好的线性度,Seebeck(塞贝克)系数达到37.5μV/K,略低于K型标准热电偶的塞贝克系数40.0μV/K。NiCr-NiSi thin film thermocouples were fabricated by the methods of electron beam evaporation and magnetron sputtering on the Ni-based superalloy substrates.The thermocuples were composed of Ni-based superalloy substrate,NiCrAlY buffer layer,thermal grown Al2O3 layer,sputtered Al2O3 insulated layer,NiCr-NiSi thin film thermocouple layer and sputtered Al2O3 protective layer,in turn.The results of the static calibration of the thin film thermocouple sample show that fabricated NiCr-NiSi thin film thermocouples on the Ni-based superalloy substrate possess good linearity from 25 ℃ to 600 ℃.The Seebeck coefficient of the sample is 37.5 μV/K,which is somewhat low than that of the K-type standard line thermocouples of 40.0 μV/K.

关 键 词：NiCr-NiSi薄膜热电偶 静态标定 塞贝克系数 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]