基于等离子体增强化学气相沉积技术的光电子器件多层抗反膜的设计和制作  

Design and fabrication of multilayer antireflection coating for optoelectronic devices by plasma enhanced chemical vapor deposition

作　　者：袁贺[1] 孙长征[1] 徐建明[1] 武庆[1] 熊兵[1] 罗毅[1] 

机构地区：[1]清华大学电子工程系清华信息科学与技术国家实验室集成光电子学国家重点实验室,北京100084

出　　处：《物理学报》2010年第10期7239-7244,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60536020;60723002;50706022;60977022);国家重点基础研究发展计划(批准号:2006CB302800;2006CB921106)资助的课题~~

摘　　要：针对光电子器件端面抗反镀膜的要求,研究了基于等离子体增强化学气相沉积(PECVD)技术的多层抗反膜的设计和制作.首先,对影响SiNx折射率的因素进行了实验研究,确定了具有大折射率差的SiO2/SiNx材料的PECVD沉积条件.根据理论计算分析,设计了四层SiO2/SiNx抗反膜结构,能够在70nm的波长范围内实现低于10-4的反射率,并且当单层膜厚度变化在±5nm以内时,中心波长1550nm处的反射率低于5×10-4.根据计算结果,在F-P激光器端面进行了SiO2/SiNx多层抗反镀膜的制作.对输出光功率谱的测试分析表明,在1535—1565nm范围内的残余反射率达到了10-4量级。The design and fabrication of multilayer antireflection（AR） coating based on plasma enhanced chemical vapor deposition（PECVD） is studied for its applications in optoelectronic devices.Deposition conditions for obtaining SiO2 /SiNx thin films with large refractive index difference is determined through systematic study of factors influencing the refractive index of deposited SiNx.Four-layer SiO2 /SiNx AR coating is designed to exhibit a reflectivity of less than 10-4 over 70 nm bandwidth.Reflectivity of the thin film structure at the center wavelength of 1550 nm remains less than 5 × 10-4 when the thickness deviation of any single layer is within ± 5 nm from the designed value.Based on the simulation results,SiO2 /SiNx multilayer AR coating is deposited on the end facet of a Fabry-Perot laser.By analyzing the output spectra of the laser,the residual reflectivity of the AR coating is determined to be on the order of 10-4 over the wavelength range of 1535—1565 nm.

关 键 词：抗反膜 等离子体增强化学气相沉积 二氧化硅/氮化硅多层膜 

分 类 号：TN205[电子电信—物理电子学] O484.41[理学—固体物理]