低电阻率高透过率TAZO透明导电膜的制备及性能  

Preparation and property of transparent conducting Ti-Al co-doped zinc oxide films with low resistivity and high transmittance

作　　者：史晓菲[1] 郭美霞[1] 

机构地区：[1]山东理工大学理学院,山东淄博255049

出　　处：《电子元件与材料》2010年第10期21-24,共4页Electronic Components And Materials

基　　金：山东省自然科学基金资助项目(No.ZR2009GL015)

摘　　要：利用直流磁控溅射工艺,在水冷玻璃衬底上制备了透过率高、电阻率相对较低的钛铝共掺杂ZnO(TAZO)透明导电膜。用XRD和SEM等研究其结构、应力和光电性能与靶基距之间的关系。结果表明:TAZO薄膜为六方纤锌矿结构的多晶薄膜,且具有c轴择优取向。当靶基距为42mm时,薄膜样品晶格畸变最小,具有最小压应力(绝对值)0.270GPa,同时具有最小方块电阻4.21?/□;靶基距为48mm时,薄膜样品具有最小电阻率3.09×10–4?·cm。所有薄膜样品的可见光区平均透过率都超过了91%。Transparent conducting Ti-Al co-doped zinc oxide films （TAZO） with high transmittance and relatively low resistivity were prepared on water-cooled glass substrate by DC magnetron sputtering process. The relation between structure, stress and optoelectrical properties of obtained TAZO films and distance of target-substrate were studied with XRD and SEM. Results show that TAZO films are polycrystalline with a hexagonal wurtzite structure and a preferred orientation perpendicular to the substrates along the c-axis. When the distance of target-substrate is 42 mm, the distortion in the crystal lattice of TAZO films is minimum, and the films possess lowest stress （0.270 GPa） and the lowest sheet resistance （4.21 ？/□）. When the distance of target-substrate is 48 mm, the lowest resistivity （3.09×10–4 ？·cm） is obtained. The average transmittance of all the TAZO thin films is over 91% in the visible light range.

关 键 词：靶基距 TAZO薄膜 透明导电膜 磁控溅射 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055