电导数测试用于大功率半导体激光器的快速筛选  

An Application of the Electrical Derivative Measurement in Rapid Screening of High power Semiconductor Lasers

作　　者：李红岩[1] 石家纬[1] 金恩顺[1] 齐丽云[1] 李正庭[1] 高鼎三[1] 肖建伟[2] 刘宗顺[2] 

机构地区：[1]吉林大学电子工程系集成光电子国家重点实验室吉林大学实验区 [2]中国科学院半导体所集成光电子国家重点实验室科学院半导体所实验区

出　　处：《中国激光》1999年第6期507-510,共4页Chinese Journal of Lasers

基　　金：集成光电子国家重点联合实验室中国科学院半导体所实验区和吉林省科委资助项目

摘　　要：对氧化物条型ＧａＡｓ／ＧａＡｌＡｓ大功率量子阱激光器的电导数曲线及其参数与器件可靠性之间的相关性进行了讨论，指出ｍ，ｈ，ｂ参数可以评价器件质量和可靠性。实验结果表明电导数测试是大功率半导体激光器快速筛选的新方法。In this paper, the relationships between the device reliability and the electrical derivative curves and the electrical derivative parameters of oxide stripe structure GaAs/GaAlAs high power quantum well semiconductor lasers are discussed. Then it is pointed out that the quality and the reliability of the devices can be evaluated by electrical derivative parameters (m, h, b). In short, the electrical derivative measurement can be applied to screen high power semiconductor lasers rapidly.

关 键 词：半导体激光器 可靠性 筛选 测试 

分 类 号：TN248.406[电子电信—物理电子学]