改进SSPD浪涌吸收能力的工艺研究  

Processing Technique for Improving the Surge Handling Capability of the SSPD

作　　者：郑学仁[1] 吴朝晖[1] 刘百勇[1] 

机构地区：[1]华南理工大学应用物理系

出　　处：《微电子学》1999年第3期183-186,共4页Microelectronics

基　　金：广东省自然科学基金

摘　　要：介绍了用于宽带快速信息传输系统的半导体瞬态浪涌保护器件（ＳＳＰＤ）在小的器件面积和小的器件电容情况下，提高ＳＳＰＤ浪涌吸收能力的工艺方法。理论分析和实验结果都说明，关键是减少基区总宽度，而在制备工艺中设法减少基区少子寿命的衰减也是有效措施之一。A processing technique to improve surge handling capability of semiconductor surge protection devices (SSPD)is presented,which should have both small device area and small capacitance for application to high speed wideband information transmission systems.In order to increase the surge handling capability of the device,a double p type diffusion is used.In the Gallium diffusion step,an SiO 2 layer is used as a mask to obtain a thinner base width and thus avoid the reduction of minority carrier lifetime.It is proved that this is an effective way to reduce the on state voltage drop,hence improving the surge handling capability.

关 键 词：半导体器件 半导体工艺 浪涌保护器件 SSPD 

分 类 号：TN305[电子电信—物理电子学]