提高雪崩击穿电压新技术──深阱终端结构  

Deep Trench Termination-A New Technology for Improving Abalanche Breakdown Voltage

作　　者：周蓉[1] 胡思福[1] 张庆中[1] 

机构地区：[1]电子科技大学微电子科学与技术系,成都610054

出　　处：《电子科技大学学报》1999年第3期259-261,共3页Journal of University of Electronic Science and Technology of China

基　　金：四川省应用基础研究专项基金

摘　　要：研究了深阱终端结构提高击穿电压的原理，模拟分析了阱中介质、阱深、阱宽及阱表面场板对击穿电压的影响。结果表明，带有场极的深阱终端结构可以提高击穿电压到平行平面结的９０％。同时，深阱终端结构在不减小散热面积的情况下，还大大减小了结面积，减小了漏电流，有助于改善器件的频率特性，提高器件的稳定性。The principle of deep trench termination for improving the avalanche breakdown of thedevice is studied. The effects of trench's depth and width, the field plate, the dielectric used to fill trench onthe avalanche breakdown voltage are analyzed using MEDICI. The results indicate that deep trenchtermination with field plate increases avalanche breakdown voltage of that of the device to 90% of that ofthe parallel plane junction. Meanwhile, the structure helps increase the cut-off frequency, the dissipationpower and the device reliability by decreasing the actual junction area and the surface leaking current.

关 键 词：深阱终端 雪崩击穿电压 介质 场板 结构 

分 类 号：TN322.803[电子电信—物理电子学]