Si_(1-x)Ge_x材料和双极型器件的进展  

Development of Si1-xGex Material and Bipolar Devices

作　　者：贾宏勇[1] 孙自敏[1] 陈培毅[1] 

机构地区：[1]清华大学微电子所

出　　处：《半导体情报》1999年第3期18-24,共7页Semiconductor Information

摘　　要：Ｓｉ１－ｘＧｅｘ材料具有许多优良的性质，高质量的应变外延层可以把能带工程的概念引入到Ⅳ族器件之中。外延Ｓｉ１－ｘＧｅｘ基区的异质结双极型晶体管（ＨＢＴ）获得了优良的性能，并且，其具有可以同硅工艺兼容的优点，把Ｓｉ１－ｘＧｅｘ同Ｓｉ集成的ＢｉＣＭＯＳ工艺取得了很大的发展，已经达到了工业应用的水平。Ｓｉ１－ｘＧｅｘ工艺的发展，电路速度的提高，也促进了微波集成电路的进步，提高了ＳｉＭＭＩＣ的应用频段。从目前的发展现状来看，已经达到了在射频（ＲＦ）通信中广泛应用的阶段。Si1-xGex material has many unique characteristics.The high performance strained epitaxial layer can introduce the concept of bandgap energy into the column devices.The epibase Si1-xGex heterojunction bipolar transistor (HBT) results in good performance.Because of the compatibility with Si process and the rapid progress of Bi CMOS integration,the Si1-xGex devices and process have already reach the industry application level.The development of Si1-xGex process and the improvement of the microwave circuits promote the development of microwave integrated circuits and the applicable frequency band of Si MMIC.The situation today implies that Si1-xGex technology have achieved the stage of extensive application in RF wireless telecommunication.

关 键 词：SI1-XGEX HBT 微波器件 异质结 双极晶体管 

分 类 号：TN322.8[电子电信—物理电子学] TN385.04