SiC高温氧化的研究  

Study on High Temperature Oxidation in SiC Process

作　　者：霍玉柱[1] 商庆杰[1] 潘宏菽[1] 

机构地区：[1]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2010年第10期980-982,共3页Semiconductor Technology

摘　　要：热氧化是碳化硅晶片工艺中一种常用的工艺,但基于硅工艺的氧化温度一般都相对较低,此温度下,碳化硅氧化缓慢,在很多情况下很难满足工艺需求。利用新设计的高温氧化设备对碳化硅晶片进行不同温度下的氧化实验。实验结果显示,高温下,碳化硅氧化速度加快,温度的增加对氧化速度影响极大,以1 200℃时的氧化速率为基准,1 250℃时的氧化速率是1 200℃时的1.5倍;1 300℃下的氧化速率能达到1 200℃的2倍;而在1 350℃时,氧化速度已经将近1 200℃时的3倍。As a ritual process,thermal oxidation is usually used in SiC devices process.Oxidation temperature in the silicon process is relatively low,under which oxidation process of SiC is too slow.Therefore,it hardly satisfies the demand of oxidation process.Using a high temperature oxidation equipment,the oxidation experiments of SiC were taken at different temperatures.The results show that the oxidation rate of SiC increases quickly under the high temperature and the oxidation rate is markedly influenced with the temperature increasing.The oxidation rates of SiC at 1 250 ℃,1 300 ℃ and 1 350 ℃ are respectively 1.5 times,twice and nearly 3 times of which at 1 200 ℃.

关 键 词：碳化硅 微波 功率器件 氧化 

分 类 号：TB304.24[一般工业技术—材料科学与工程]