HVPE法制备GaN过程中GaAs衬底的氮化  

Nitridation of GaAs Substrates to Grow GaN by HVPE Method

作　　者：张嵩[1] 杨瑞霞[1] 徐永宽[2] 李强[2] 

机构地区：[1]河北工业大学信息工程学院,天津300401 [2]中国电子科技集团第46研究所,天津300220

出　　处：《微纳电子技术》2010年第10期610-613,618,共5页Micronanoelectronic Technology

摘　　要：在自制的立式氢化物气相外延(HVPE)系统炉中,一定温度下通入一定流量的NH3使GaAs(111)衬底氮化一层GaN薄膜,以防止高温外延生长GaN时GaAs分解,进而提高了之后GaN外延生长的晶体质量。实验主要通过XRD检测氮化层的质量,研究了氮化温度和时间对氮化层的影响。实验发现,氮化温度过高会使GaAs表面分解,氮化层为多晶。氮化时间过短,氮化层致密性低,不能起到保护衬底的作用;时间过长则氮化层质量降低,GaN(002)半高宽(FWHM)较大。分析结果表明,在500℃氮化2min的工艺条件下,获得的氮化层质量相比其他条件较好,致密性高。The surface of GaAs（111） substrate was nitrided and a GaN film layer was formed on it when the NH3 with a certain flow-rate was pumped into the self-made vertical HVPE furnace at a suitable temperature.This layer can avoid the decomposition of GaAs and improve the quality of GaN epitaxial layer grown subsequently.The effects of the nitriding temperature and nitriding time on nitride layers during the nitriding process were investigated by comparing the correspon-ding XRD spectra of the GaN epitaxial layer.The results show that the high nitriding temperature can cause the decomposation of GaAs at the substrate surface and the growth of polycrystal in nitrided layer.Besides that,the short nitriding time decreases the compactness of the nitrided layer and cannot avoid the substrate decomposition.On the contrary,if the time is too long,the quality of the nitrided layer is reduced,and the FWHM of GaN（002） is increased.Through the analysis,it is found that high quality and compactness nitrided layers can be prepared at 500 ℃ nitride temperature for 2 min.

关 键 词：GAN 氮化层 GaAs 氢化物气相外延(HVPE) XRD 

分 类 号：TN304.23[电子电信—物理电子学] TN304.055