在ZnO/Al_2O_3衬底上生长高质量GaN单晶薄膜  

Growth of Good GaN Single Crystal Film on ZnO/Al 2O 3 Substrate

作　　者：毛祥军[1] 杨志坚[1] 张国义[1] 叶志镇[2] 

机构地区：[1]北京大学物理系人工微结构和介观物理国家重点实验室 [2]浙江大学硅材料国家重点实验室

出　　处：《高技术通讯》1999年第3期35-38,共4页Chinese High Technology Letters

基　　金：国家自然科学基金

摘　　要：利用ＬＰ－ＭＯＣＶＤ在ＺｎＯ／Ａｌ２Ｏ３衬底上生长了ＧａＮ。实验发现低温生长ＧａＮ过渡层有利于晶体质量的提高；样品ＰＬ谱主峰红移到蓝光区。It is reported that GaN was grown on ZnO/Al 2O 3 substrate by LP MOCVD, and its characteristics were studied. The experimental results show that the GaN buffer is necessary for improving the quality of GaN epitaxial layer. The main peak of GaN epitaxial layer photoluminescence moves to blue spectrum, which has been confirmed that the diffusion of Zn in ZnO layer into GaN is responsible.

关 键 词：衬底 氧化锌 氮化镓 单晶 薄膜 蓝色 LED 

分 类 号：TN304.23[电子电信—物理电子学] TN104.3