Si片上PbTiO_3薄膜的XPS研究  

XPS Studies of the PbTiO_3 Films on Silicon Wafers

作　　者：汪贵华[1] 杨伟毅[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,南京210094

出　　处：《真空科学与技术》1999年第2期97-101,共5页Vacuum Science and Technology

摘　　要：用溶胶 凝胶方法在Si上成功地制备了钙钛矿型的PbTiO3薄膜。X射线衍射结果显示 ,在热处理温度为 750～ 90 0℃范围内 ,随温度升高 ,薄膜由多晶结构转变为定向结晶。X射线光电子能谱分析发现 ,薄膜表面存在SiO2 薄层 ,其厚度大约为 0 6nm ,该薄层是在制膜过程中衬底Si通过PbTiO3薄膜扩散到表面与大气中的O2 反应而形成的。在 750℃热处理的薄膜 ,膜层中不含SiO2 ,但温度升高 ,膜层中存在SiO2 成分 ,这可能是Si在向表面扩散过程中与膜中的O反应生成的。表面SiO2 可通过Ar离子的轻微溅射而消除 ,而膜内SiO2PbTiO 3 thin films with perovskite structure were successfully grown on Si wafers by sol gel process and studied with X ray photoelectron spectroscopy.X ray diffraction results revealed that high temperature annealing at temperatures from 750 to 900 ℃ results in crystal structure transition——from randomly oriented polycrystal into single crystal with a certain preferential crystal growth orientation.XPS results showed that 0.6 nm thick SiO 2 films grown on top of the PbTiO 3 films.Silicon atoms of the substrate segregating to the surface of PbTiO 3 films may react with oxygen in the ambient and form SiO 2 film.The film annealed at 750 ℃ contains no SiO 2;but higher annealing temperatures,say 850 ℃ and 900 ℃,results in formation of SiO 2 in the film,which may originate from reaction of oxygen content and segregated Si.SiO 2 on the PbTiO 3 film surface can be easily removed by light Ar ion sputtering;however,SiO 2 in the film has to be eliminated by optimizing film growth parameters in sol gel process.

关 键 词：溶胶-凝胶法 钛酸铅 薄膜 硅 铁电薄膜 XPS研究 

分 类 号：TN304.905[电子电信—物理电子学] TN304.055