光电导开关非线性模式下光电延迟现象分析  

Analysis of the Photoelectric Delay Phenomenon of Photoconductive Switches in Nonlinear Mode

作　　者：戴慧莹[1] 向珊[1] 施卫[2] 

机构地区：[1]空军工程大学理学院,西安710051 [2]西安理工大学理学院应用物理系,西安710084

出　　处：《半导体光电》2010年第5期713-715,共3页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(10876026)

摘　　要：报道了在高偏置电压下半绝缘GaAs光导开关进入非线性模式并产生光电延迟的实验结果。分析了非线性模式下光电延迟现象,指出半导体材料深能级杂质的俘获作用是产生光电延迟的主要原因;计算了由于电荷畴传输引起的光电延迟时间,得到与实验相吻合的结果。The experimental results that the semi-insulating GaAs photoconductive switches will enter into a nonlinear mode and photoelectric delay will happen under a high biased voltage are reported.The photoelectric delay in the nonlinear mode is analyzed and the main reason for this phenomenon is pointed out to be the trapping effect of deep level impurities in semiconductor materials.Photoelectric delay time caused by charge domain transmission is calculated,which shows a conformance with the experimental results.

关 键 词：光导开关 深能级杂质 延迟时间 

分 类 号：TN201[电子电信—物理电子学]