CCD用透明栅电极的制作  

Fabrication of Transparent Gate Electrodes for CCD

作　　者：李华高[1] 赵梁博[2] 邓涛[1] 曾武贤[1] 向华兵[1] 熊玲[1] 

机构地区：[1]重庆光电技术研究所,重庆400060 [2]天津工业大学信息与通信工程学院,天津300160

出　　处：《半导体光电》2010年第5期732-735,共4页Semiconductor Optoelectronics

基　　金：中国电子科技集团公司CCD研发中心基础技术基金项目

摘　　要：采用反应溅射法制备了ITO透明导电薄膜材料,薄膜电阻率为2.59×10-4Ω·cm,可见光透过率可达90%;通过优化光刻工艺条件,选择合适的ITO薄膜刻蚀液,完成了ITO透明栅电极的制作;使用ITO透明电极代替其中一相多晶硅电极,制作的CCD图像传感器,其蓝光响应明显增加。Transparent conductive indium-tin-oxide（ITO）films were deposited by reactive sputtering.The conductance and the maximal transmittance of the films are obtained to be 2.59×10^-4 Ω·cm and greater than 90% for the visible light spectrum,respectively.By optimizing the lithography process and using the appropriate ITO etching fluid,the ITO transparent gate electrodes were successfully fabricated,and CCD image sensors were fabricated by replacing one of the CCD＇s polysilicon electrodes with ITO.The blueresponse of the sensors is significantly improved.

关 键 词：ITO薄膜 透明栅电极 CCD 

分 类 号：TN386.5[电子电信—物理电子学]