用等离子体增强化学气相沉积制备微晶硅薄膜  

The Preparation of Microcrystalline Si Films Deposited by ECR-PECVD Using SiH_4+Ar

作　　者：程华[1,2] 张昕[2] 张广城[2] 刘汝宏[2] 吴爱民[3] 石南林[1] 

机构地区：[1]中国科学院金属研究所,沈阳110016 [2]中国人民解放军装甲兵技术学院,长春130117 [3]大连理工大学,大连116024

出　　处：《材料研究学报》2010年第5期547-549,共3页Chinese Journal of Materials Research

摘　　要：以Ar+SiH_4作为反应气体,用电子回旋共振等离子体化学气相沉积(ECR PECVD)方法制备微晶硅薄膜,研究了微波功率对薄膜中H含量、薄膜的沉积速率、择优取向和结晶度的影响。结果表明,在300℃制备低温微晶硅薄膜,随着微波功率的增大,薄膜的沉积速率先增大后减小,微波功率为600 W时达到最大;而结晶度和薄膜中的H含量则分别呈现单调增大和单调减少的趋势;使用不同的微波功率,薄膜的择优取向均为(111)方向。Microcrystalline silicon films were prepared using Ar diluted SiH_4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition（ECR-PECVD）.The effects of the microwave power on deposition rate,crystallinity,grain size and the configuration of H existing in microcrystalline silicon films were investigated.The results show that the crystallinity increases and the concentration of hydrogen decreases monotonously with the increasing of the microwave power.But the deposition rate first increases monotonously,and then decreases.Optimized microwave power is 600 W for the highest deposition rate.〈111〉orientation is the only dominant crystal texture for films obtained with different power.

关 键 词：材料合成与加工工艺 微晶硅薄膜 Ar稀释SiH_4 ECR-PECVD 微波功率 

分 类 号：O484[理学—固体物理]