硅抛光片表面颗粒度控制  

Methods of particles controlling on the surface of silicon wafers

作　　者：武永超[1] 杨洪星[1] 张伟才[1] 宋晶[1] 赵权[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2010年第10期20-22,47,共4页Equipment for Electronic Products Manufacturing

摘　　要：硅片表面的颗粒、有机物、金属、吸附分子、微粗糙度、自然氧化层等会严重影响器件性能,其中表面颗粒度会引起图形缺陷、外延缺陷、影响布线的完整性,是高成品率的最大障碍。探讨了如何减少硅表面颗粒度的方法。第一部分从兆声波清洗的机理出发,研究了清洗温度及清洗时间对硅抛光片表面颗粒度的影响;第二部分通过实验对比了增加多片盒清洗工艺对硅抛光片表面颗粒度的影响。Particles,organic contaminant,.metal atom,adhered molecule and oxide layer on the surface of silicon wafer can affect the ability of devices.And particles,especially,will cause defects which are responsible for most of yield losses in the process of semiconductor manufacturing.We mainly focus on the methods of reducing particles on wafer surface in this paper.First,the mechanisms of megasonic wet cleaning is analysed.And how the cleaning temperature and cleaning time affect on particle reducing are investigated.Second,cleaning of packaging boxes are conducted,then experiments are conducted to compare the number of particles on wafer surface between wafers packagesd in non-cleaning boxes and wafers in cleaned-boxes.

关 键 词：兆声波清洗 硅片湿法化学清洗 颗粒去除 

分 类 号：TN305.2[电子电信—物理电子学]